In the present paper, the experimental identification of a compact low-frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. In addition to the usual control of the noise sources through the DC or the mean value of the base current, the model reported in the present work is flexible enough to allows for the control of the noise sources through the instantaneous value of the base current.
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation / Borgarino, Mattia; N., Corciulo; C., Florian; P. A., Traverso; Fantini, Fausto; F., Filicori. - ELETTRONICO. - 1:(2006), pp. Not available-Not available. (Intervento presentato al convegno GeMiC 2006 tenutosi a Karlsruhe (Germany) nel 20-30 march 2006).
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation
BORGARINO, Mattia;FANTINI, Fausto;
2006
Abstract
In the present paper, the experimental identification of a compact low-frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. In addition to the usual control of the noise sources through the DC or the mean value of the base current, the model reported in the present work is flexible enough to allows for the control of the noise sources through the instantaneous value of the base current.
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