A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz with good phase noise performance. A low frequency noise model has been identified and implemented in a Gummel Poon BJT nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier at 6GHz and 7.5GHz, respectively.
C Band DROs Using Microwave Bipolar Devices / C., Florian; M., Pirazzini; G., Vannini; A., Santarelli; C., Angelone; M., Paparo; Borgarino, Mattia; F., Filicori. - STAMPA. - 1:(2004), pp. 41-44. (Intervento presentato al convegno GAAS Symposium tenutosi a Amsterdam (Paesi Bassi) nel 11-15 ottobre 2004).
C Band DROs Using Microwave Bipolar Devices
BORGARINO, Mattia;
2004
Abstract
A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz with good phase noise performance. A low frequency noise model has been identified and implemented in a Gummel Poon BJT nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier at 6GHz and 7.5GHz, respectively.
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