The effect of electron irradiation on the properties of porous Silicon samples is investigated. Both the surface chemistry (measured through Auger spectroscopy) and the photoluminescence of porous Silicon are measured before and after electron irradiation. A different behaviour is observed on samples with various porosity. High porosity samples show surface charge accumulation during irradiation and photoluminescence degradation after treatment, while low porosity samples do not. This is interpreted in terms of space charge effects on the porous Silicon surface that induce loss of surface passivation and, consequently, photoluminescence degradation. This finding can explain the measured electroluminescent properties of Schottky diodes formed by Au evaporation on porous Silicon.
Electronic Charge Trapping Effects in Porous Silicon / L., Pavesi; L., Calliari; E., Zanghellini; G., Mariotto; M., Anderle; Bisi, Olmes. - STAMPA. - (1993), pp. 61-67. (Intervento presentato al convegno NATO ADVANCED RESEARCH WORKSHOP ON OPTICAL PROPERTIES OF LOW DIMENSIONAL SILICON STRUCTURES tenutosi a MEYLAN, FRANCE nel MAR 01-03, 1993).
Electronic Charge Trapping Effects in Porous Silicon
BISI, Olmes
1993
Abstract
The effect of electron irradiation on the properties of porous Silicon samples is investigated. Both the surface chemistry (measured through Auger spectroscopy) and the photoluminescence of porous Silicon are measured before and after electron irradiation. A different behaviour is observed on samples with various porosity. High porosity samples show surface charge accumulation during irradiation and photoluminescence degradation after treatment, while low porosity samples do not. This is interpreted in terms of space charge effects on the porous Silicon surface that induce loss of surface passivation and, consequently, photoluminescence degradation. This finding can explain the measured electroluminescent properties of Schottky diodes formed by Au evaporation on porous Silicon.
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