The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side-including elongations of the metal-semiconductor bond (i.e., interface strain)-whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001) / Ruini, Alice; Resta, R.; AND BARONI, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - ELETTRONICO. - 56:(1997), pp. 14921-14924. [10.1103/PhysRevB.56.14921]
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)
RUINI, Alice;
1997
Abstract
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side-including elongations of the metal-semiconductor bond (i.e., interface strain)-whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.
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