Iodine (I-2)-assisted, 30 keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I-2 assistance improves insulation resistance from 300-400 G Omega to 20-50 T Omega. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25 at. % at 7 nm and extends, with a decreasing Gaussian tail, down to 40 nm, whereas in I-2-processed samples Ga concentration is reduced below 5 at. %. I-2 assistance is found to increase minimum gap size from 8 to 16 nm and to markedly roughen Au surface morphology. (c) 2006 American Institute of Physics.

Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam / G. C., Gazzadi; E., Angeli; AND P., Facci; Frabboni, Stefano. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 89:17(2006), pp. 173112-1-173112-3. [10.1063/1.2364833]

Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam

FRABBONI, Stefano
2006

Abstract

Iodine (I-2)-assisted, 30 keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I-2 assistance improves insulation resistance from 300-400 G Omega to 20-50 T Omega. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25 at. % at 7 nm and extends, with a decreasing Gaussian tail, down to 40 nm, whereas in I-2-processed samples Ga concentration is reduced below 5 at. %. I-2 assistance is found to increase minimum gap size from 8 to 16 nm and to markedly roughen Au surface morphology. (c) 2006 American Institute of Physics.
2006
89
17
173112-1
173112-3
Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam / G. C., Gazzadi; E., Angeli; AND P., Facci; Frabboni, Stefano. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 89:17(2006), pp. 173112-1-173112-3. [10.1063/1.2364833]
G. C., Gazzadi; E., Angeli; AND P., Facci; Frabboni, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/451878
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