This work reports and critically reviews failure mechanisms induced by metal-GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchesed devices manufactured by different technologies.
Metal-GaAs interaction and contact degradation in microwave MESFETs / E., Zanoni; A., Callegari; C., Canali; Fantini, Fausto; H. L., Hartnagel; F., Magistrali; A., Paccagnella; M., Vanzi. - In: QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL. - ISSN 0748-8017. - STAMPA. - 6:(1990), pp. 29-40.
Metal-GaAs interaction and contact degradation in microwave MESFETs
FANTINI, Fausto;
1990
Abstract
This work reports and critically reviews failure mechanisms induced by metal-GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchesed devices manufactured by different technologies.
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