Electromigration /EM) in thin film interconnection lines is one of the major concerns for the development of ULSI devices, employing advanced design rules. Different models have been proposed, but the complete comprehension of the basic physical mechanisms leading to EM is still unsatisfactory. In this work, well-established results and unsolved problems are reviewed.
Electromigration in thin-film interconnection lines: models, methods and results / A., Scorzoni; B., Neri; C., Caprile; Fantini, Fausto. - In: MATERIALS SCIENCE REPORTS. - ISSN 0920-2307. - STAMPA. - 7:(1991), pp. 143-220.
Electromigration in thin-film interconnection lines: models, methods and results
FANTINI, Fausto
1991
Abstract
Electromigration /EM) in thin film interconnection lines is one of the major concerns for the development of ULSI devices, employing advanced design rules. Different models have been proposed, but the complete comprehension of the basic physical mechanisms leading to EM is still unsatisfactory. In this work, well-established results and unsolved problems are reviewed.
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