In this work we investigate, by means of electrical and both spectral and integral electroluminescence measurements, the light emission mechanisms in AlGaAs/InGaAs/GaAs peudomorphic HEMTs biased at high drain voltage.
On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionisation regime / Cova, P.; Menozzi, R.; Pavesi, M.; Pavesi, S.; Manfredi, M.; Fantini, Fausto. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 31:(1998), pp. 276-281.
On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionisation regime
FANTINI, Fausto
1998
Abstract
In this work we investigate, by means of electrical and both spectral and integral electroluminescence measurements, the light emission mechanisms in AlGaAs/InGaAs/GaAs peudomorphic HEMTs biased at high drain voltage.
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