In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO2 layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation / Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(1):(2004), pp. 7-9. [10.1109/LED.2003.821673]

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

CHINI, Alessandro;
2004

Abstract

In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO2 layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.
2004
25(1)
7
9
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation / Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(1):(2004), pp. 7-9. [10.1109/LED.2003.821673]
Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/449822
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