We present synchrotron radiation photoemission studies of bulk CrSi2 and silicide phases grown on Si by thermal processing of the Si-Cr interface. Experiment shows that Si-Cr interface formation at room temperature results in reacted phases that differ from both bulk CrSi2 and in situ—grown Si-rich CrSi2. Extended—Hückel-theory linear combination of atomic orbitals calculations of the density of states of Cr3Si, CrSi, and CrSi2 show that Si—Cr bond formation involves Si p and Cr d states with minimal charge transfer.
Electronic structure of Cr Silicides and Si-Cr interface reactions / A., Franciosi; J. H., Weaver; D. G., O'Neill; F. A., Schmidt; Bisi, Olmes; CALANDRA BUONAURA, Carlo. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 28:(1983), pp. 7000-7008.
Electronic structure of Cr Silicides and Si-Cr interface reactions
BISI, Olmes;CALANDRA BUONAURA, Carlo
1983
Abstract
We present synchrotron radiation photoemission studies of bulk CrSi2 and silicide phases grown on Si by thermal processing of the Si-Cr interface. Experiment shows that Si-Cr interface formation at room temperature results in reacted phases that differ from both bulk CrSi2 and in situ—grown Si-rich CrSi2. Extended—Hückel-theory linear combination of atomic orbitals calculations of the density of states of Cr3Si, CrSi, and CrSi2 show that Si—Cr bond formation involves Si p and Cr d states with minimal charge transfer.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
