We present a Monte Carlo investigation of the influence of the nonequilibrium phonon population on second-order transport properties in GaAs. We calculate the velocity and energy autocorrelation functions and the velocity–energy cross-correlation functions, both for the case with and without phonon perturbation. By comparing the results, we find significant modifications in the correlation functions and consequently in the equivalent noise temperature due to the presence of the nonequilibrium phonons.
Influence of hot phonons on electronic noise in GaAs / Bordone, Paolo; L., Varani; L., Reggiani; L., Rota; T., Kuhn. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 63:(1993), pp. 1107-1109.
Influence of hot phonons on electronic noise in GaAs
BORDONE, Paolo;
1993
Abstract
We present a Monte Carlo investigation of the influence of the nonequilibrium phonon population on second-order transport properties in GaAs. We calculate the velocity and energy autocorrelation functions and the velocity–energy cross-correlation functions, both for the case with and without phonon perturbation. By comparing the results, we find significant modifications in the correlation functions and consequently in the equivalent noise temperature due to the presence of the nonequilibrium phonons.
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