We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (~ 20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are here discussed; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions evidenced.
Combined HREM and theoretical analysis of SiC/Si interface / V., Grillo; Frabboni, Stefano; G., Cicero; G., Savini; AND A., Catellani. - STAMPA. - 80:(2003), pp. 69-72. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A).
Combined HREM and theoretical analysis of SiC/Si interface
FRABBONI, Stefano;
2003
Abstract
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (~ 20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are here discussed; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions evidenced.
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