Growth of CaF2 on Si(001) is studied as a function of the substrate temperature during deposition for coverages from fraction of a monolayer (ML) up to several monolayers. Structural and morphological studies using atomic force microscopy, low-energy electron diffraction, and reflection high-energy electron diffraction are combined with measurements of core-level photoemission and x-ray absorption. Bonding between CaF2 molecules and Si(001) substrates is followed by monitoring core-level shifts and x-ray absorption line shape. It is found that a dissociative reaction occurs at high deposition temperatures (similar to 750 degrees C), giving rise to a 1-ML-thick uniform wetting layer, which is bonded with the substrate through Ca atoms. This wetting layer changes the surface periodicity from double domain 2x1+1x2 to single domain 3x1. Three-dimensional CaF2 elongated islands develop on top of the wetting layer, with their (110) planes parallel to the Si surface plane. At temperatures below 600 degrees C no dissociative reaction takes place for CaF2; nanodimensional islands develop in the form of rectangular-based huts. The crystallographic orientation of these islands is parallel to that of the Si(001) substrate. The data are compared to results obtained on CaF2 deposited on Si(111).

Calcium fluoride on Si(001): adsorption mechanisms and epitaxial growth modes / Pasquali, Luca; S. M., Suturin; V. P., Ulin; N. S., Sokolov; G., Selvaggi; A., Giglia; N., Mahne; M., Pedio; Nannarone, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 72:(2005), pp. 045448-1-045448-15. [10.1103/PhysRevB.72.045448]

Calcium fluoride on Si(001): adsorption mechanisms and epitaxial growth modes

PASQUALI, Luca;NANNARONE, Stefano
2005

Abstract

Growth of CaF2 on Si(001) is studied as a function of the substrate temperature during deposition for coverages from fraction of a monolayer (ML) up to several monolayers. Structural and morphological studies using atomic force microscopy, low-energy electron diffraction, and reflection high-energy electron diffraction are combined with measurements of core-level photoemission and x-ray absorption. Bonding between CaF2 molecules and Si(001) substrates is followed by monitoring core-level shifts and x-ray absorption line shape. It is found that a dissociative reaction occurs at high deposition temperatures (similar to 750 degrees C), giving rise to a 1-ML-thick uniform wetting layer, which is bonded with the substrate through Ca atoms. This wetting layer changes the surface periodicity from double domain 2x1+1x2 to single domain 3x1. Three-dimensional CaF2 elongated islands develop on top of the wetting layer, with their (110) planes parallel to the Si surface plane. At temperatures below 600 degrees C no dissociative reaction takes place for CaF2; nanodimensional islands develop in the form of rectangular-based huts. The crystallographic orientation of these islands is parallel to that of the Si(001) substrate. The data are compared to results obtained on CaF2 deposited on Si(111).
2005
72
045448-1
045448-15
Calcium fluoride on Si(001): adsorption mechanisms and epitaxial growth modes / Pasquali, Luca; S. M., Suturin; V. P., Ulin; N. S., Sokolov; G., Selvaggi; A., Giglia; N., Mahne; M., Pedio; Nannarone, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 72:(2005), pp. 045448-1-045448-15. [10.1103/PhysRevB.72.045448]
Pasquali, Luca; S. M., Suturin; V. P., Ulin; N. S., Sokolov; G., Selvaggi; A., Giglia; N., Mahne; M., Pedio; Nannarone, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/308940
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