RF current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s / Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Meneghesso, G.; Chini, Alessandro; Mishra, U. K.; Canali, Claudio; Zanoni, E.. - STAMPA. - (2002), pp. 689-692. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a S. Francisco (California, USA) nel Dec. 2002) [10.1109/IEDM.2002.1175932].
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s
VERZELLESI, Giovanni;CHINI, Alessandro;CANALI, Claudio;
2002
Abstract
RF current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
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