The electronic structure of the NiSi2(111) surface has been calculated in the tight-binding scheme using an accurate parametrization of first-principles results for the bulk system. Two surface terminations are considered which correspond to two possible surface phases. The resulting surface band structures are quite different in the two cases suggesting a possible spectroscopical characterization of the surface geometry.
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE / Manghi, Franca; G., Guidetti; Bisi, Olmes. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 56:(1992), pp. 416-420.
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE
MANGHI, Franca;BISI, Olmes
1992
Abstract
The electronic structure of the NiSi2(111) surface has been calculated in the tight-binding scheme using an accurate parametrization of first-principles results for the bulk system. Two surface terminations are considered which correspond to two possible surface phases. The resulting surface band structures are quite different in the two cases suggesting a possible spectroscopical characterization of the surface geometry.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
