An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].
Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires / M., Catalano; A., Taurino; M., Lomascolo; L., Vasanelli; M., De Giorgi; A., Passaseo; R., Rinaldi; R., Cingolani; O., Mauritz; Goldoni, Guido; F., Rossi; Molinari, Elisa; P., Crozier. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 87:5(2000), pp. 2261-2264. [10.1063/1.372170]
Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires
GOLDONI, Guido;MOLINARI, Elisa;
2000
Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
