A detailed study of Si-H stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on Si-H stretching was determined.

Induction-model analysis of Si-H stretching mode in Porous Silicon / A., Borghesi; G., Guizzetti; A., Sassella; Bisi, Olmes; L., Pavesi. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 615-618.

Induction-model analysis of Si-H stretching mode in Porous Silicon

BISI, Olmes;
1994

Abstract

A detailed study of Si-H stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on Si-H stretching was determined.
1994
89
615
618
Induction-model analysis of Si-H stretching mode in Porous Silicon / A., Borghesi; G., Guizzetti; A., Sassella; Bisi, Olmes; L., Pavesi. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 615-618.
A., Borghesi; G., Guizzetti; A., Sassella; Bisi, Olmes; L., Pavesi
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/304233
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 42
  • ???jsp.display-item.citation.isi??? 39
social impact