A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables the base resistance to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract the base resistance in impact-ionization regime, where current crowding due to negative base current induces an increase in base resistance at increasing emitter current.
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal / Verzellesi, Giovanni; R., Turetta; Pavan, Paolo; A., Collini; A., Chantre; A., Marty; Canali, Claudio; E., Zanoni. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 14:(1993), pp. 431-434.
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal
VERZELLESI, Giovanni;PAVAN, Paolo;CANALI, Claudio;
1993
Abstract
A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables the base resistance to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract the base resistance in impact-ionization regime, where current crowding due to negative base current induces an increase in base resistance at increasing emitter current.
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