Gate-lag transients and hole-like deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs / Verzellesi, Giovanni; A., Cavallini; Basile, Alberto Francesco; A., Castaldini; Canali, Claudio. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25:8(2004), pp. 517-519. [10.1109/LED.2004.831965]
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
VERZELLESI, Giovanni;BASILE, Alberto Francesco;CANALI, Claudio
2004
Abstract
Gate-lag transients and hole-like deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
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