One promising approach for the development of silicon-based light-emitting devices is the epitaxial growth of Si nanostructures. In this context, the lattice matched system CaF2/Si/CaF2 as prototype of a well controlled and ordered Si-based system with known microscopic structure is proposed. For this system, a new mechanism is found leading to a direct band gap based on the coupling of interface states in very thin Si layers.
Si/CaF2 superlattices: a direct gap structure due to interface state coupling / Ossicini, Stefano; A., Fasolino; F., Bernardino. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - STAMPA. - 190:(1995), pp. 117-122.
Si/CaF2 superlattices: a direct gap structure due to interface state coupling
OSSICINI, Stefano;
1995
Abstract
One promising approach for the development of silicon-based light-emitting devices is the epitaxial growth of Si nanostructures. In this context, the lattice matched system CaF2/Si/CaF2 as prototype of a well controlled and ordered Si-based system with known microscopic structure is proposed. For this system, a new mechanism is found leading to a direct band gap based on the coupling of interface states in very thin Si layers.
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