The first theoretical and experimental analysis of image states at a semiconductor surface is presented: results of angle resolved inverse photoemission and of ab-initio pseudopotential calculation in the non-local density approximation for GaP(1 1 0) are compared showing the presence of a well defined image state with a dispersion in k-space very different from the one predicted by simple models
Experimental and theoretical evidence of image states at semiconductor surfaces: the case of GaP(110) / Manghi, Franca; P., Perfetti; B., Reihl. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 76:(1990), pp. 1371-1373.
Experimental and theoretical evidence of image states at semiconductor surfaces: the case of GaP(110)
MANGHI, Franca;
1990
Abstract
The first theoretical and experimental analysis of image states at a semiconductor surface is presented: results of angle resolved inverse photoemission and of ab-initio pseudopotential calculation in the non-local density approximation for GaP(1 1 0) are compared showing the presence of a well defined image state with a dispersion in k-space very different from the one predicted by simple models
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