hermal desorption spectrometry (TDS) has been applied to investigate the thermal evolution of vacancy-like defects in helium-implanted (100) silicon samples with a dose of 2x1016 cm-2 at 20 keV. The measured spectra present features which can be interpreted as fingerprints of the modifications occurring in the sample. The defects that are recognized which affect the desorption are: thermally unstable helium-vacancy complexes, pressurized gas bubbles organized in planar structures (cracks) and thermally stable cavities. The attribution is supported by the results obtained by complementary techniques, such elastic recoil detection, channeling Rutherford backscattering spectrometry, cross sectional transmission electron microscopy and positron annihilation spectroscopy which have been employed on isothermally pre-annealed samples in the range 100-800oC

Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry / Corni, Federico; G., Calzolari; Gambetta, Francesca; Nobili, Carlo Emanuele; Tonini, Rita; Zapparoli, Mauro. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - STAMPA. - 71 (1):(2000), pp. 207-212. [10.1016/S0921-5107(99)00376-1]

Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry

CORNI, Federico;GAMBETTA, Francesca;NOBILI, Carlo Emanuele;TONINI, Rita;ZAPPAROLI, Mauro
2000

Abstract

hermal desorption spectrometry (TDS) has been applied to investigate the thermal evolution of vacancy-like defects in helium-implanted (100) silicon samples with a dose of 2x1016 cm-2 at 20 keV. The measured spectra present features which can be interpreted as fingerprints of the modifications occurring in the sample. The defects that are recognized which affect the desorption are: thermally unstable helium-vacancy complexes, pressurized gas bubbles organized in planar structures (cracks) and thermally stable cavities. The attribution is supported by the results obtained by complementary techniques, such elastic recoil detection, channeling Rutherford backscattering spectrometry, cross sectional transmission electron microscopy and positron annihilation spectroscopy which have been employed on isothermally pre-annealed samples in the range 100-800oC
2000
71 (1)
207
212
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry / Corni, Federico; G., Calzolari; Gambetta, Francesca; Nobili, Carlo Emanuele; Tonini, Rita; Zapparoli, Mauro. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - STAMPA. - 71 (1):(2000), pp. 207-212. [10.1016/S0921-5107(99)00376-1]
Corni, Federico; G., Calzolari; Gambetta, Francesca; Nobili, Carlo Emanuele; Tonini, Rita; Zapparoli, Mauro
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/16302
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