III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M.; Roccato, N.; Piva, F.; De Santi, C.; Brescancin, R.; Casu, C.; Caria, A.; Mukherjee, K.; Haller, C.; Carlin, J. F.; Grandjean, N.; Vallone, M.; Tibaldi, A.; Bertazzi, F.; Goano, M.; Verzellesi, G.; Mosca, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.. - 12022:(2022), p. 28. ((Intervento presentato al convegno Light-Emitting Devices, Materials, and Applications XXVI 2022 tenutosi a San Francisco, California, United States nel 2022 [10.1117/12.2606599].

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Verzellesi G.;Zanoni E.;
2022

Abstract

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Light-Emitting Devices, Materials, and Applications XXVI 2022
San Francisco, California, United States
2022
12022
28
Buffolo, M.; Roccato, N.; Piva, F.; De Santi, C.; Brescancin, R.; Casu, C.; Caria, A.; Mukherjee, K.; Haller, C.; Carlin, J. F.; Grandjean, N.; Vallone, M.; Tibaldi, A.; Bertazzi, F.; Goano, M.; Verzellesi, G.; Mosca, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M.; Roccato, N.; Piva, F.; De Santi, C.; Brescancin, R.; Casu, C.; Caria, A.; Mukherjee, K.; Haller, C.; Carlin, J. F.; Grandjean, N.; Vallone, M.; Tibaldi, A.; Bertazzi, F.; Goano, M.; Verzellesi, G.; Mosca, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.. - 12022:(2022), p. 28. ((Intervento presentato al convegno Light-Emitting Devices, Materials, and Applications XXVI 2022 tenutosi a San Francisco, California, United States nel 2022 [10.1117/12.2606599].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1286311
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