Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify sources of variability, understand retention problems, and point a path to improving reliability and enabling high-density storage FE memories with extended endurance.
Variability sources and reliability of 3D-FeFETs / Pesic, M.; Beltrando, B.; Padovani, A.; Gangopadhyay, S.; Kaliappan, M.; Haverty, M.; Villena, M. A.; Piccinini, E.; Bertocchi, M.; Chiang, T.; Larcher, L.; Strand, J.; Shluger, A. L.. - 2021-:(2021), pp. 1-7. (Intervento presentato al convegno 2021 IEEE International Reliability Physics Symposium, IRPS 2021 tenutosi a usa nel 2021) [10.1109/IRPS46558.2021.9405118].
Variability sources and reliability of 3D-FeFETs
Padovani A.;Larcher L.;Strand J.;
2021
Abstract
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify sources of variability, understand retention problems, and point a path to improving reliability and enabling high-density storage FE memories with extended endurance.
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