Extreme Ultraviolet Lithography (EUVL) is a promising candidate for the device fabrication at feature sizes of a half pitch of 32 nm and below. An EUV lithography system (Fig. 1) is composed of various subsystems, such as the source, the optics, the exposure system, a mask, and the resist. Currently various consortia, private companies, universities, and research institutes are working on the development of EUV lithography in Japan. EUVA and Selete are involved in an EUVL-related NEDO project under MIRAI Scheme. The recent activities of those projects are described in this presentation. © 2010 IEEE.
Current status of EUV lithography development in Japan / Larcher, L.. - (2010), pp. 58-58. (Intervento presentato al convegno 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 tenutosi a Hsin Chu, twn nel 2010) [10.1109/VTSA.2010.5488950].
Current status of EUV lithography development in Japan
Larcher L.
2010
Abstract
Extreme Ultraviolet Lithography (EUVL) is a promising candidate for the device fabrication at feature sizes of a half pitch of 32 nm and below. An EUV lithography system (Fig. 1) is composed of various subsystems, such as the source, the optics, the exposure system, a mask, and the resist. Currently various consortia, private companies, universities, and research institutes are working on the development of EUV lithography in Japan. EUVA and Selete are involved in an EUVL-related NEDO project under MIRAI Scheme. The recent activities of those projects are described in this presentation. © 2010 IEEE.
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