The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroelectric (FE) memories, which shows scaling feasibility allowing targeting high-density storage applications. In order to provide engineering guidelines for FE memory devices it is crucial to establish a correlation between the electrical device performances and the underlying physical mechanisms. In this work, we will discuss physical and circuit modeling approaches for FE memories connecting the FE HfO2 materials properties to the electrical performances of memory cells, artificial synapse for neuromorphic and in memory computing applications.
Physical and circuit modeling of HfO2 based ferroelectric memories and devices / Pesic, M.; Di Lecce, V.; Hoffmann, M.; Mulaosmanovic, H.; Max, B.; Schroeder, U.; Slesazeck, S.; Larcher, L.; Mikolajick, T.. - 2018-:(2018), pp. 1-4. (Intervento presentato al convegno 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 tenutosi a Hyatt Regency San Francisco Airport Hotel, usa nel 2017) [10.1109/S3S.2017.8308732].
Physical and circuit modeling of HfO2 based ferroelectric memories and devices
Di Lecce V.;Larcher L.;
2018
Abstract
The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroelectric (FE) memories, which shows scaling feasibility allowing targeting high-density storage applications. In order to provide engineering guidelines for FE memory devices it is crucial to establish a correlation between the electrical device performances and the underlying physical mechanisms. In this work, we will discuss physical and circuit modeling approaches for FE memories connecting the FE HfO2 materials properties to the electrical performances of memory cells, artificial synapse for neuromorphic and in memory computing applications.
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