The structural and surface sensitivity of electron energy loss spectroscopy has been exploited to investigate the Pd-Si(111)2 x 1 interface. We found the two M(IV), V shallow edges of Pd suitable for an EELS study on the whole coverage range. EXAFSlike oscillations were detectable above the M(IV), V edge for about 150 eV. These features together with the intensity ratio (M(V)/M(IV)) between the M(V) and M(IV) components showed a reproducible dependence vs. the thickness of the Pd film. From the analysis of the near edge part and the EXAFSlike oscillations a general indication of the formation of a compound very close to Pd2Si in the coverage range (5 divided-by 20) angstrom and the presence of a peculiar Pd-Si compound at coverages lower than 5 angstrom was obtained.

A CORE LEVEL ELECTRON-ENERGY LOSS STUDY OF THE PD-SI(111)2X1 INTERFACE FORMATION / Turchini, S; Fiorello, Am; Nannarone, Stefano; Picozzi, P; Santucci, S; Lozzi, L; Decrescenzi, M; Betti, Mg; Mariani, C; DEL PENNINO, Umberto. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. - ISSN 0392-6737. - STAMPA. - 13:(1991), pp. 203-210.

A CORE LEVEL ELECTRON-ENERGY LOSS STUDY OF THE PD-SI(111)2X1 INTERFACE FORMATION

NANNARONE, Stefano;DEL PENNINO, Umberto
1991

Abstract

The structural and surface sensitivity of electron energy loss spectroscopy has been exploited to investigate the Pd-Si(111)2 x 1 interface. We found the two M(IV), V shallow edges of Pd suitable for an EELS study on the whole coverage range. EXAFSlike oscillations were detectable above the M(IV), V edge for about 150 eV. These features together with the intensity ratio (M(V)/M(IV)) between the M(V) and M(IV) components showed a reproducible dependence vs. the thickness of the Pd film. From the analysis of the near edge part and the EXAFSlike oscillations a general indication of the formation of a compound very close to Pd2Si in the coverage range (5 divided-by 20) angstrom and the presence of a peculiar Pd-Si compound at coverages lower than 5 angstrom was obtained.
1991
13
203
210
A CORE LEVEL ELECTRON-ENERGY LOSS STUDY OF THE PD-SI(111)2X1 INTERFACE FORMATION / Turchini, S; Fiorello, Am; Nannarone, Stefano; Picozzi, P; Santucci, S; Lozzi, L; Decrescenzi, M; Betti, Mg; Mariani, C; DEL PENNINO, Umberto. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. - ISSN 0392-6737. - STAMPA. - 13:(1991), pp. 203-210.
Turchini, S; Fiorello, Am; Nannarone, Stefano; Picozzi, P; Santucci, S; Lozzi, L; Decrescenzi, M; Betti, Mg; Mariani, C; DEL PENNINO, Umberto
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/12171
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