The recent discovery of ferroelectricity in HfO2 has revived the interest into non-volatile memories based on ferroelectric transistors (FeFETs). The key advantages of these FeFETs include the low power consumption and the compatibility with the existing CMOS process. On the other hand, issues related mainly to endurance still represent a challenge to the development of the technology. In this Letter, we propose to exploit an analytical expression for the Memory Window (MW) as a simple yet effective characterization tool to evaluate the endurance of FeFETs. The MW is defined as the difference between threshold voltages occurring due to polarization switching. The analytical formulation of the MW allows one to quickly estimate the generated trap concentration as a function of number of writing cycles (or time) without recurring to numerical simulations. With the aid of the analytical model, we find that for typical program/erase pulse amplitudes and duration, endurance has a weak dependence on writing conditions. The characterization technique based on the MW would allow the systematic comparison of the performance and endurance of next-generation FeFETs.

A memory window expression to evaluate the endurance of ferroelectric FETs / Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad. - In: APPLIED PHYSICS LETTERS. - ISSN 1077-3118. - 117:15(2020), pp. 152901-152901. [10.1063/5.0021081]

A memory window expression to evaluate the endurance of ferroelectric FETs

Nicolò Zagni
;
Paolo Pavan;
2020

Abstract

The recent discovery of ferroelectricity in HfO2 has revived the interest into non-volatile memories based on ferroelectric transistors (FeFETs). The key advantages of these FeFETs include the low power consumption and the compatibility with the existing CMOS process. On the other hand, issues related mainly to endurance still represent a challenge to the development of the technology. In this Letter, we propose to exploit an analytical expression for the Memory Window (MW) as a simple yet effective characterization tool to evaluate the endurance of FeFETs. The MW is defined as the difference between threshold voltages occurring due to polarization switching. The analytical formulation of the MW allows one to quickly estimate the generated trap concentration as a function of number of writing cycles (or time) without recurring to numerical simulations. With the aid of the analytical model, we find that for typical program/erase pulse amplitudes and duration, endurance has a weak dependence on writing conditions. The characterization technique based on the MW would allow the systematic comparison of the performance and endurance of next-generation FeFETs.
2020
15-ott-2020
117
15
152901
152901
A memory window expression to evaluate the endurance of ferroelectric FETs / Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad. - In: APPLIED PHYSICS LETTERS. - ISSN 1077-3118. - 117:15(2020), pp. 152901-152901. [10.1063/5.0021081]
Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad
File in questo prodotto:
File Dimensione Formato  
J12_PP.pdf

Open access

Descrizione: Articolo Principale
Tipologia: Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione 259.07 kB
Formato Adobe PDF
259.07 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1212164
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 16
  • ???jsp.display-item.citation.isi??? 16
social impact