Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer.
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes / Driussi, F.; Pilotto, A.; De Belli, D.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Menk, R. H.; Nichetti, C.; Selmi, L.; Steinhartova, T.; Palestri, P.. - 2020-:(2020), pp. 175-180. (Intervento presentato al convegno 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 tenutosi a gbr nel 2020) [10.1109/ICMTS48187.2020.9107920].
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes
Selmi L.;Palestri P.
2020
Abstract
Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer.
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