Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si-n-MOSFET's is considered as a relevant application.
MONTE-CARLO SIMULATIONS OF HIGH-ENERGY ELECTRONS AND HOLES IN SI-N-MOSFETS / Venturi, F; Sangiorgi, E; Brunetti, Rossella; Quade, W; Jacoboni, Carlo; Ricco, B.. - In: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS. - ISSN 0278-0070. - STAMPA. - 10:(1991), pp. 1276-1286.
MONTE-CARLO SIMULATIONS OF HIGH-ENERGY ELECTRONS AND HOLES IN SI-N-MOSFETS
BRUNETTI, Rossella;JACOBONI, Carlo;
1991
Abstract
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si-n-MOSFET's is considered as a relevant application.
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