The electrical activity of silver as well as its annealing properties in 10 Ω cm p-type Fz silicon substrate are studied by means of the four-point probe and minority carrier lifetime measurements. Silver atom concentration in the range 1014to 1015cm-3consistently showed a donor type behaviour in the material and its presence led to a reduction of up to two orders of magnitude in the lifetime of minority carriers by the formation of deep-level traps. Isochronal annealing of silver contaminated specimens showed some gettering of the Ag impurities with resulting temperature dependent changes in the resistivity as well as the minority carrier lifetime values. Analysis of our results shows that a large fraction of the silver impurity atoms present forms the deep level defects and both the deep- and donor-levels appear to originate from the same source. © Les Éditions de Physique 1996.

Electrical properties of silver impurities and their annealing behaviour in p-type Fz silicon / Adegboyega, G. A.; Passari, L.; Butturi, M. A.; Poggi, A.; Suzi, E.. - In: JOURNAL DE PHYSIQUE III. - ISSN 1155-4320. - 6:12(1996), pp. 1691-1696. [10.1051/jp3:1996207]

Electrical properties of silver impurities and their annealing behaviour in p-type Fz silicon

Butturi M. A.;
1996

Abstract

The electrical activity of silver as well as its annealing properties in 10 Ω cm p-type Fz silicon substrate are studied by means of the four-point probe and minority carrier lifetime measurements. Silver atom concentration in the range 1014to 1015cm-3consistently showed a donor type behaviour in the material and its presence led to a reduction of up to two orders of magnitude in the lifetime of minority carriers by the formation of deep-level traps. Isochronal annealing of silver contaminated specimens showed some gettering of the Ag impurities with resulting temperature dependent changes in the resistivity as well as the minority carrier lifetime values. Analysis of our results shows that a large fraction of the silver impurity atoms present forms the deep level defects and both the deep- and donor-levels appear to originate from the same source. © Les Éditions de Physique 1996.
1996
6
12
1691
1696
Electrical properties of silver impurities and their annealing behaviour in p-type Fz silicon / Adegboyega, G. A.; Passari, L.; Butturi, M. A.; Poggi, A.; Suzi, E.. - In: JOURNAL DE PHYSIQUE III. - ISSN 1155-4320. - 6:12(1996), pp. 1691-1696. [10.1051/jp3:1996207]
Adegboyega, G. A.; Passari, L.; Butturi, M. A.; Poggi, A.; Suzi, E.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1186550
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 6
social impact