We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. © 2010 American Institute of Physics.
Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice / De Simoni, G.; Singha, A.; Gibertini, M.; Karmakar, B.; Polini, M.; Piazza, V.; Pfeiffer, L. N.; West, K. W.; Beltram, F.; Pellegrini, V.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 97:13(2010), pp. 132113-132115. [10.1063/1.3493189]
Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
Gibertini M.;
2010
Abstract
We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. © 2010 American Institute of Physics.
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