We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to silicon FETs will be highlighted.
Semi-classical modeling of nanoscale nMOSFETs with III-V channel / Palestri, P.; Caruso, E.; Badami, O.; Driussi, F.; Esseni, D.; Selmi, L.. - (2019), pp. 234-236. (Intervento presentato al convegno 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 tenutosi a Singapore nel 2019) [10.1109/EDTM.2019.8731143].
Semi-classical modeling of nanoscale nMOSFETs with III-V channel
Palestri P.;Selmi L.
2019
Abstract
We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to silicon FETs will be highlighted.
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