In this work, we report a detailed discussion on the techniques and the requirements needed to enable Random Telegraph Noise (RTN) analysis as a tool to investigate device reliability. Starting with the understanding of the RTN signal properties, a set of best practices to perform measurements and data analysis is established to guarantee reliable results and a correct ensuing physical interpretation. It will be shown that combining dedicated and careful experiments with refined data analysis and comprehensive physics simulations is hence required to enable RTN analysis as a safe and innovative investigation tool for electron devices. The effectiveness of RTN analysis as an investigation tool is demonstrated on both FinFET and resistive memory devices: the parameters of RTN as observed in the experiments performed on FinFETs allow understanding the details of the defects generation during stress in such devices; RTN analysis on RRAM allows understanding the physical origin of RTN in these devices and to estimate the physical properties of defects involved in the phenomenon.
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices / Puglisi, Francesco Maria. - (2016), pp. 13-17. (Intervento presentato al convegno 2016 IEEE International Integrated Reliability Workshop, IIRW 2016 tenutosi a Stanford Sierra Conference Center, usa nel 2016) [10.1109/IIRW.2016.7904891].
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices
Puglisi, Francesco Maria
2016
Abstract
In this work, we report a detailed discussion on the techniques and the requirements needed to enable Random Telegraph Noise (RTN) analysis as a tool to investigate device reliability. Starting with the understanding of the RTN signal properties, a set of best practices to perform measurements and data analysis is established to guarantee reliable results and a correct ensuing physical interpretation. It will be shown that combining dedicated and careful experiments with refined data analysis and comprehensive physics simulations is hence required to enable RTN analysis as a safe and innovative investigation tool for electron devices. The effectiveness of RTN analysis as an investigation tool is demonstrated on both FinFET and resistive memory devices: the parameters of RTN as observed in the experiments performed on FinFETs allow understanding the details of the defects generation during stress in such devices; RTN analysis on RRAM allows understanding the physical origin of RTN in these devices and to estimate the physical properties of defects involved in the phenomenon.
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