Wide-bandgap devices are under the spotlight of scientific research as they exhibit great performance in terms of efficiency and temperature operation. However, to fully exploit their characteristics, dedicated driving circuits are needed. High-power gate-insulated switching devices exhibit important input capacitance; when fast switching speeds are demanded, high-current pulses are needed to drive the gate terminal. This is particularly true for wide-bandgap devices, capable of lower transition times than conventional silicon devices. The proposed circuit is a voltage controlled resistor, which output can drive wide-bandgap devices. Design criteria, as well as simulation results, are presented.
A voltage controlled power resistor circuit for active gate driving of wide-bandgap power devices / Soldati, Alessandro; Barater, Davide; Concari, Carlo; Galea, Michael; Gerada, Chris. - (2015), pp. 2445-2450. (Intervento presentato al convegno 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 tenutosi a Pacifico Yokohama, jpn nel 2015) [10.1109/IECON.2015.7392469].
A voltage controlled power resistor circuit for active gate driving of wide-bandgap power devices
Barater, Davide;
2015
Abstract
Wide-bandgap devices are under the spotlight of scientific research as they exhibit great performance in terms of efficiency and temperature operation. However, to fully exploit their characteristics, dedicated driving circuits are needed. High-power gate-insulated switching devices exhibit important input capacitance; when fast switching speeds are demanded, high-current pulses are needed to drive the gate terminal. This is particularly true for wide-bandgap devices, capable of lower transition times than conventional silicon devices. The proposed circuit is a voltage controlled resistor, which output can drive wide-bandgap devices. Design criteria, as well as simulation results, are presented.
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