The structural evolution of helium-related extended defects in silicon, formed after intermediate dose helium implantation and annealing, has been investigated. It is found that the highest helium concentration (annealing at 300°C) is associated with clusters of bubbles arranged in a platelet-like morphology. At 500°c the helium concentration markedly decreases and clusters of cavities formed by a central, large cavity surrounded by small cavities (planetarylike structures) are detected. Thermal treatment at 900°c accomplishes complete helium effusion from the sample leaving behind empty cavities i.e. voids.

Transmission electron microscopy study of helium implanted silicon / Frabboni, Stefano; Corni, Federico; Tonini, Rita; Nobili, Carlo Emanuele; Ottaviani, Giampiero. - (2018), pp. 379-382.

Transmission electron microscopy study of helium implanted silicon

Stefano Frabboni
;
Federico Corni;Rita Tonini;Carlo Nobili;Giampiero Ottaviani
2018

Abstract

The structural evolution of helium-related extended defects in silicon, formed after intermediate dose helium implantation and annealing, has been investigated. It is found that the highest helium concentration (annealing at 300°C) is associated with clusters of bubbles arranged in a platelet-like morphology. At 500°c the helium concentration markedly decreases and clusters of cavities formed by a central, large cavity surrounded by small cavities (planetarylike structures) are detected. Thermal treatment at 900°c accomplishes complete helium effusion from the sample leaving behind empty cavities i.e. voids.
2018
Microscopy of semiconducting materials 2003
9781351074636
CRC Press
STATI UNITI D'AMERICA
Transmission electron microscopy study of helium implanted silicon / Frabboni, Stefano; Corni, Federico; Tonini, Rita; Nobili, Carlo Emanuele; Ottaviani, Giampiero. - (2018), pp. 379-382.
Frabboni, Stefano; Corni, Federico; Tonini, Rita; Nobili, Carlo Emanuele; Ottaviani, Giampiero
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1167762
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