The transfer Length Method is a well-estab experimental technique to characterize the contact resista semiconductor devices. However, its dependability is ques for metal-graphene contacts. We investigate in-depth the si cal error of the extracted contact resistance values and we strategies to limit such error and to obtain reliable result method has been successfully applied to samples with dil contact metals.

Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method / Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Kataria, Satender; Palestri, Pierpaolo; Lenirne, Max C.; Selmi, Luca. - 2018-:(2018), pp. 57-62. (Intervento presentato al convegno 2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018 tenutosi a Courtyard by Marriott Austin Downtown/Convention Center, usa nel 2018) [10.1109/ICMTS.2018.8383765].

Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method

Luca Selmi;Pierpaolo Palestri
2018

Abstract

The transfer Length Method is a well-estab experimental technique to characterize the contact resista semiconductor devices. However, its dependability is ques for metal-graphene contacts. We investigate in-depth the si cal error of the extracted contact resistance values and we strategies to limit such error and to obtain reliable result method has been successfully applied to samples with dil contact metals.
2018
2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018
Courtyard by Marriott Austin Downtown/Convention Center, usa
2018
2018-
57
62
Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Kataria, Satender; Palestri, Pierpaolo; Lenirne, Max C.; Selmi, Luca
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method / Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Kataria, Satender; Palestri, Pierpaolo; Lenirne, Max C.; Selmi, Luca. - 2018-:(2018), pp. 57-62. (Intervento presentato al convegno 2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018 tenutosi a Courtyard by Marriott Austin Downtown/Convention Center, usa nel 2018) [10.1109/ICMTS.2018.8383765].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1166948
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