Strain measurements were performed by convergent-beam electron diffraction on both plan-view sample and cross-sections of silicon wafers, boron implanted at liquid nitrogen temperature. In the plan-view specimens, the strain value measured in the boron-doped layer agrees with previous X-ray double crystal diffraction analyses. In the cross-sectioned specimens, a profile of the strain was obtained, showing a difference between the boron-doped layer and the end-of-range, interstitial-rich layer. In the latter samples the quantitative agreement with X-ray measurements is reached when extra-relaxation along the thinning direction is taken into account.
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON / Balboni, R; Frabboni, Stefano. - In: MICROSCOPY MICROANALYSIS MICROSTRUCTURES. - ISSN 1154-2799. - STAMPA. - 2:(1991), pp. 617-626.
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON
FRABBONI, Stefano
1991
Abstract
Strain measurements were performed by convergent-beam electron diffraction on both plan-view sample and cross-sections of silicon wafers, boron implanted at liquid nitrogen temperature. In the plan-view specimens, the strain value measured in the boron-doped layer agrees with previous X-ray double crystal diffraction analyses. In the cross-sectioned specimens, a profile of the strain was obtained, showing a difference between the boron-doped layer and the end-of-range, interstitial-rich layer. In the latter samples the quantitative agreement with X-ray measurements is reached when extra-relaxation along the thinning direction is taken into account.
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