Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.

Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility / Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche. - (2007), pp. 315-318. (Intervento presentato al convegno European Solid State Device Research Conference (ESSDERC( tenutosi a Munich (D), 11-13 settembre 2007 nel 11-13/09/2007) [10.1109/ESSDERC.2007.4430941].

Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility

SELMI, Luca;
2007

Abstract

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
2007
European Solid State Device Research Conference (ESSDERC(
Munich (D), 11-13 settembre 2007
11-13/09/2007
315
318
Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility / Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche. - (2007), pp. 315-318. (Intervento presentato al convegno European Solid State Device Research Conference (ESSDERC( tenutosi a Munich (D), 11-13 settembre 2007 nel 11-13/09/2007) [10.1109/ESSDERC.2007.4430941].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163512
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