In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories / Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca. - (2010), pp. 106-109. (Intervento presentato al convegno 2010 IEEE International Memory Workshop, IMW 2010 tenutosi a Seoul, kor nel Maggio 2010) [10.1109/IMW.2010.5488384].
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories
SELMI, Luca
2010
Abstract
In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.
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