We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.
Modeling approaches for band-structure calculation in III-V FET quantum wells / Caruso, Enrico; Zerveas, G.; Baccarani, G.; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E.; Gnudi, A.; Grassi, R.; Luisier, M.; Markussen, T.; Palestri, Pierpaolo; Schenk, A.; Selmi, Luca; Sousa, M.; Stokbro, K.; Visciarelli, M.. - ELETTRONICO. - (2015), pp. 101-104. (Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon tenutosi a Bologna, Italy nel 26-28 Jan. 2015) [10.1109/ULIS.2015.7063783].
Modeling approaches for band-structure calculation in III-V FET quantum wells
PALESTRI, Pierpaolo;SELMI, Luca;
2015
Abstract
We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.
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