This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By using floating gate devices less aggressively scaled than the MOSFETs of Bude (1995) we are able to: (1) develop criteria to separate SEEI from the coexisting channel hot electron (CHE) injection; (2) point out a direct proportionality between the gate (I/sub G/) and the substrate (I/sub B/) currents that provides a signature of SEEI; (3) reconcile SEEI with reported mechanisms of optical minority carrier generation in the substrate.
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices / Esseni, David; Selmi, Luca. - (1998), pp. 579-582. (Intervento presentato al convegno IEDM - IEEE International Electron Devices Meeting 1998 nel DEC 98).
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices
SELMI, Luca
1998
Abstract
This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By using floating gate devices less aggressively scaled than the MOSFETs of Bude (1995) we are able to: (1) develop criteria to separate SEEI from the coexisting channel hot electron (CHE) injection; (2) point out a direct proportionality between the gate (I/sub G/) and the substrate (I/sub B/) currents that provides a signature of SEEI; (3) reconcile SEEI with reported mechanisms of optical minority carrier generation in the substrate.
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