In this work we investigate the correlation between hydrogen content and leakage current through the Al2O3 layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al2O3 layer. Using atomistic simulations consolidated by detailed Al2O3 physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses / Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; DE SALVO, B.. - (2011), pp. 978-979. (Intervento presentato al convegno International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) 2011 tenutosi a Hsinchu, 25-27 April 2011) [10.1109/VTSA.2011.5872268].
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses
SELMI, Luca;
2011
Abstract
In this work we investigate the correlation between hydrogen content and leakage current through the Al2O3 layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al2O3 layer. Using atomistic simulations consolidated by detailed Al2O3 physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.
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