This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of p+ -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.
Observation of a new hole gate current component in p(+)-poly gate p-channel MOSFET's / Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.. - STAMPA. - 30:(2000), pp. 136-139. (Intervento presentato al convegno 30th European Solid-State Device Research Conference, ESSDERC 2000 tenutosi a Cork, Ireland nel 2000) [10.1109/ESSDERC.2000.194733].
Observation of a new hole gate current component in p(+)-poly gate p-channel MOSFET's
SELMI, Luca;
2000
Abstract
This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of p+ -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.
| File | Dimensione | Formato | |
|---|---|---|---|
|
2000_09_ESSDERC_Driussi_ObservationNewHole.pdf
Accesso riservato
Dimensione
167.36 kB
Formato
Adobe PDF
|
167.36 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
