Electron- and hole-mobility enhancements in biaxially strained metal–oxide–semiconductor transistors are still a matter for active investigation, and this brief presents a critical examination of a recently proposed interpretation of the experimental data, according to which the strain significantly modifies not only the root-mean-square value but also the correlation length of the surface-roughness spectrum.We present a systematic comparison between comprehensive numerical simulations and experiments, which supports such an interpretation.

On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors / DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:9(2011), pp. 3219-3223. [10.1109/TED.2011.2158606]

On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors

SELMI, Luca
2011

Abstract

Electron- and hole-mobility enhancements in biaxially strained metal–oxide–semiconductor transistors are still a matter for active investigation, and this brief presents a critical examination of a recently proposed interpretation of the experimental data, according to which the strain significantly modifies not only the root-mean-square value but also the correlation length of the surface-roughness spectrum.We present a systematic comparison between comprehensive numerical simulations and experiments, which supports such an interpretation.
2011
58
9
3219
3223
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors / DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:9(2011), pp. 3219-3223. [10.1109/TED.2011.2158606]
DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca
File in questo prodotto:
File Dimensione Formato  
De_Michielis_M_TED_2011.pdf

Accesso riservato

Dimensione 181.99 kB
Formato Adobe PDF
181.99 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162880
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 3
social impact