Thiswork focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a socalled staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.

Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation / Steinhartova, T.; Nichetti, C.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Koshmak, K.; Nannarone, S.; Arfelli, F.; Zilio, S. Dal; Biasiol, G.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 12:Article Number: C11017(2017), pp. 1-7. [10.1088/1748-0221/12/11/C11017]

Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation

Palestri, P.;Selmi, L.;
2017

Abstract

Thiswork focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a socalled staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.
2017
12
Article Number: C11017
1
7
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation / Steinhartova, T.; Nichetti, C.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Koshmak, K.; Nannarone, S.; Arfelli, F.; Zilio, S. Dal; Biasiol, G.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 12:Article Number: C11017(2017), pp. 1-7. [10.1088/1748-0221/12/11/C11017]
Steinhartova, T.; Nichetti, C.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Koshmak, K.; Nannarone, S.; Arfelli, F.; Zilio, S. Dal; Biasiol, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162782
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