In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) / Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2015), pp. 229-230. (Intervento presentato al convegno . tenutosi a . nel .).
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)
PALESTRI, Pierpaolo;SELMI, Luca
2015
Abstract
In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.
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