Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrms grid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions. © 2014 IEEE.
Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme / Gurpinar, Emre; De, Dipankar; Castellazzi, Alberto; Barater, Davide; Buticchi, Giampaolo; Franceschini, Giovanni. - (2014). (Intervento presentato al convegno 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014 tenutosi a Santander, esp nel 2014) [10.1109/COMPEL.2014.6877124].
Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme
Barater, Davide;Franceschini, Giovanni
2014
Abstract
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrms grid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions. © 2014 IEEE.
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