Defects are common in many materials and some were regarded for years as detrimental. Recently with the advent of ultra-sensitive detectors, quantum optical single spin magnetic resonance protocols and advanced material synthesis and doping, diamond intra-band gap defects and their nanostructured counterpart are revealed to be a disruptive discovery for the future of nanoscale sensing and quantum technologies[1]. We will report on recently studied optical centres in another wide-band gap semiconductor, such as silicon carbide (SiC). SiC harbors paramagnetic defects whose quantum properties were recently unraveled [2-7]. As occurred for similar diamond point defects[1], we have recently identified a bright single photon emission in 4H-SiC. We will show more recent results on single defects SiC nanoparticles [8], nanotetrapods [9] and other SiC quantum emission [10] providing novel information on their physics and atomistic structure. The fundamental understanding of these defects is essential for their engineering and deployment in next generation multifunctional sensors and in quantum nano- photonics. We will discuss the potential designs of photonics cavities to further enhance some of these single photon sources.

Room temperature Single Photon Sources in Silicon Carbide / Castelletto, Stefania; Lohrmann, Alex; Rosa, Lorenzo; Johnson, Brett C.; Ohshima, Takeshi; Gali, Adam. - (2015), pp. 29-30. (Intervento presentato al convegno Nanoscale Quantum Optics Kick-off Workshop tenutosi a Belgrade, Serbia nel 9-10 April 2015).

Room temperature Single Photon Sources in Silicon Carbide

ROSA, Lorenzo;
2015

Abstract

Defects are common in many materials and some were regarded for years as detrimental. Recently with the advent of ultra-sensitive detectors, quantum optical single spin magnetic resonance protocols and advanced material synthesis and doping, diamond intra-band gap defects and their nanostructured counterpart are revealed to be a disruptive discovery for the future of nanoscale sensing and quantum technologies[1]. We will report on recently studied optical centres in another wide-band gap semiconductor, such as silicon carbide (SiC). SiC harbors paramagnetic defects whose quantum properties were recently unraveled [2-7]. As occurred for similar diamond point defects[1], we have recently identified a bright single photon emission in 4H-SiC. We will show more recent results on single defects SiC nanoparticles [8], nanotetrapods [9] and other SiC quantum emission [10] providing novel information on their physics and atomistic structure. The fundamental understanding of these defects is essential for their engineering and deployment in next generation multifunctional sensors and in quantum nano- photonics. We will discuss the potential designs of photonics cavities to further enhance some of these single photon sources.
2015
Nanoscale Quantum Optics Kick-off Workshop
Belgrade, Serbia
9-10 April 2015
29
30
Castelletto, Stefania; Lohrmann, Alex; Rosa, Lorenzo; Johnson, Brett C.; Ohshima, Takeshi; Gali, Adam
Room temperature Single Photon Sources in Silicon Carbide / Castelletto, Stefania; Lohrmann, Alex; Rosa, Lorenzo; Johnson, Brett C.; Ohshima, Takeshi; Gali, Adam. - (2015), pp. 29-30. (Intervento presentato al convegno Nanoscale Quantum Optics Kick-off Workshop tenutosi a Belgrade, Serbia nel 9-10 April 2015).
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1141811
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact