We report on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed in 80us pulsed I-V measurements compare to the DC IV curves. The adoption of a SiN passivation layer improved the I-V pulsed characteristics at 80us but current dispersion was still severe when using shorter (200ns) pulse widths. © 2005 IEEE.

Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs / Chini, Alessandro; Rajan, S.; Wong, M.; Fu, Y.; Speck, J. S.; Mishra, U. K.. - 2005:(2005), pp. 63-64. (Intervento presentato al convegno 63rd Device Research Conference, DRC'05 tenutosi a Santa Barbara, CA, USA nel 20-22 June 2005) [10.1109/DRC.2005.1553056].

Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs

CHINI, Alessandro;
2005

Abstract

We report on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed in 80us pulsed I-V measurements compare to the DC IV curves. The adoption of a SiN passivation layer improved the I-V pulsed characteristics at 80us but current dispersion was still severe when using shorter (200ns) pulse widths. © 2005 IEEE.
2005
63rd Device Research Conference, DRC'05
Santa Barbara, CA, USA
20-22 June 2005
2005
63
64
Chini, Alessandro; Rajan, S.; Wong, M.; Fu, Y.; Speck, J. S.; Mishra, U. K.
Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs / Chini, Alessandro; Rajan, S.; Wong, M.; Fu, Y.; Speck, J. S.; Mishra, U. K.. - 2005:(2005), pp. 63-64. (Intervento presentato al convegno 63rd Device Research Conference, DRC'05 tenutosi a Santa Barbara, CA, USA nel 20-22 June 2005) [10.1109/DRC.2005.1553056].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1113650
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